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Bimonthly, started in 1957
Administrator
Shanxi Provincial Education Department
Sponsor
Taiyuan University of Technology
Publisher
Ed. Office of Journal of TYUT
Editor-in-Chief
SUN Hongbin
ISSN: 1007-9432
CN: 14-1220/N
Administrator
Shanxi Provincial Education Department
Sponsor
Taiyuan University of Technology
Publisher
Ed. Office of Journal of TYUT
Editor-in-Chief
SUN Hongbin
ISSN: 1007-9432
CN: 14-1220/N
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Preparation of GaN/TiO 2- x Heterojunction and Effect of NitridingTemperature on Its Photoelectroche
DOI:
110.16355/j.cnki.issn1007-9432tyut.2019.05.001
Received:
Accepted:
| Corresponding author | Institute | |
| HU Lanqing | College o f Materials Science and Engineering Taiyuan University of Technology |
abstract:
Ga 2O 3/TiO 2 powder was prepared using gallium nitrate and titanium dioxide nanopowder by sol-gel method.The sample was nitrided at different temperatures to obtain GaN/TiO 2-x powder.Field emission scanning electron microscopy(FESEM),X-ray diffractometry(XRD),UV-Vis spectrophotometry(UV),fluorospectrophotometry(PL),surface photovoltage spectrometry(SPV),electrochemical measurement were used to investigate the effects of nitriding temperature on the phase composition,morphology and photoelectric properties of the samples.The results show that the higher the nitriding temperature,the higher the degree of nitriding of Ga 2O 3,and the better the crystallinity of GaN.When nitrided at 700℃,TiO 2 remained its original state with no phase change and reduction reaction;when nitriding temperature reached 750℃,TiO 2 in the sample began to be gradually reduced to TiO 2-x,and with the increase of temperature,the degree of reduction and the amount of TiO 2-x increased.Almost no TiO 2 was observed in the sample nitrided at temperature over 800℃.The UV-visible absorption data show that the absorption range of sample nitrided at 700℃was the widest,the band gap of the sample nitrided at 900℃was the narrowest,and the absorbance increased with the increase of nitridation temperature.Electrochemical test results show that the samples nitrided at 850℃had the best conductivity,the highest carrier concentration and the highest separation efficiency.At-0.8 V(vs.Ag/AgCl)bias,the photocurrent density of the sample nitrided at 850℃was the highest.
Keywords:
Ga 2O 3/TiO 2;Sol-gel;nitriding temperature;GaN/TiO 2-x;photoelectrochemical properties