Introduction
Bimonthly, started in 1957
Administrator
Shanxi Provincial Education Department
Sponsor
Taiyuan University of Technology
Publisher
Ed. Office of Journal of TYUT
Editor-in-Chief
SUN Hongbin
ISSN: 1007-9432
CN: 14-1220/N
Administrator
Shanxi Provincial Education Department
Sponsor
Taiyuan University of Technology
Publisher
Ed. Office of Journal of TYUT
Editor-in-Chief
SUN Hongbin
ISSN: 1007-9432
CN: 14-1220/N
location: home > paper >
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Applications and Challenges of SiC MOSFET in Power System
DOI:
10.16355/j.cnki.issn1007-9432tyut.2019.01.004
Received:
Accepted:
| Corresponding author | Institute | |
| ZHANG Jianzhong | School of Electrical Engineering,Southeast University |
abstract:
The drive circuit of SiC MOSFET in grid-connected inverter and power electronic transformer was designed,the double pulse test platform was built to test gate driver,and then the characteristics and advantages of resonant gate drive circuit were introduced.The principle of overcurrent protection of SiC MOSFET in power system was analyzed in detail.Two overcurrent protection schemes were proposed,and the in feasibility was demonstrated.Finally,several common applications of SiC MOSFET in power system were introduced,and their prospects were summarized.
Keywords:
SiC MOSFET;gate driver;overcurrent protection;power electronic transformer;HVDC