With TiO₂/perovskite/P3HT n-i-p perovskite type battery as research object, effects of thermal annealing temperature of TiO₂film on the crystallinity of TiO₂film, morphology of perovskite film deposited on the treated TiO₂layer, and the photovoltaic performance of perovskite solar cells were investigated. Performance of perovskite solar cell device was also studied by comparing P3HT doping and different batches of P3HT materials. The results clearly show that annealing processing of TiO₂layer and property of P3HT play important roles in tuning perovskite solar cell performance. An optimized annealing condition of 300 ℃ for 45 min for the TiO₂film was obtained. The power conversion efficiency(PCE)was further improved to 11.27% by increasing the thermal annealing temperature of TiO₂layer to 500℃.A PCE of 6.77% was achieved for the cell with a 190 nm-thick perovskite film layer. By optimizing P3HT layer with chemical doping and batch screening, an improved device performance of 8.18% with VOC=0.98 V, J_SC=19.94 mA/cm², f_F=0.42, η(PCE)=8.18% was achieved. The system atic optimization of Ti_₂electronic transport layer and P3HT hole transport layer is of great significance to the preparation of high performance structure of n-i-p type perovskite battery.